onsemi

1,200 V M3S Planar SiC MOSFETs

onsemi's MOSFETs feature a D2PAK-7L package with Kelvin source configuration

Image of onsemi's 1,200 V M3S Planar SiC MOSFETsonsemi's silicon carbide (SiC) MOSFET uses a technology that provides superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include higher efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin source configuration and lower parasitic source inductance. TOLL offers moisture sensitivity level 1 (MSL 1).

Features
  • D2PAK-7L package with Kelvin source configuration
  • Excellent FOM (= RDSON * EOSS)
  • M3S technology: 22 mΩ RDS(ON) with low EON and EOFF losses
  • 15 V to 18 V gate drive
  • 100% avalanche tested
  • Halide-free and RoHS compliant
Applications
  • Industrial

1,200 V M3S Planar SiC MOSFETs

ImageManufacturer Part NumberDescriptionFET TypeTechnologyDrain to Source Voltage (Vdss)Available QuantityPriceView Details
SIC MOSFET 1200 V 22 MOHM M3S SENTBG022N120M3SSIC MOSFET 1200 V 22 MOHM M3S SEN-ChannelSiCFET (Silicon Carbide)1200 V421 - Immediate
23200 - Factory Stock		$16.59View Details
Published: 2023-05-15