1200 V Silicon Carbide (EliteSiC) MOSFETs

Product Highlights > 1200 V Silicon Carbide (EliteSiC) MOSFETs

            1200 V Silicon Carbide (EliteSiC) MOSFETs
                    onsemi's EliteSiC MOSFETs provide high efficiency, increased power density, and reduced system size
    

Image of onsemi's 1200 V Silicon Carbide (SiC) MOSFET onsemi's 1200 V EliteSiC MOSFETs use a technology that provides superior switching performance and higher reliability compared to silicon. The low ON resistance and compact chip size ensure low capacitance and gate charge. System benefits include high efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

1200 V rated
Low ON resistance
Compact chip size ensure low capacitance and gate charge

High-speed switching and low capacitance
100% UIL tested
Qualified for automotive according to AEC-Q101

Applications

PFC
OBC
Boost inverters
PV chargers
Automotive DC/DC converters for EV/PHEV

Automotive onboard chargers
Automotive auxiliary motor drives
Solar inverters
Network power supplies
Server power supplies

Updated: 2020-04-07

Published: 2019-05-29

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