Automotive SiC Schottky Barrier Diodes

ROHM Semiconductor silicon carbide (SiC) Schottky barrier diodes (SBDs) are designed to meet the demanding requirements of modern automotive applications. The SCS212ANHRTRL, SCS215ANHRTRL, SCS205KNHRTRL, and SCS220KNHRTRL models offer exceptional performance, reliability, and efficiency. These diodes are built using advanced SiC technology, which provides superior switching performance, reduced power loss, and enhanced thermal stability compared to traditional silicon-based diodes. With voltage ratings ranging from 650 V to 1,200 V and current ratings from 5 A to 20 A, these diodes are ideal for a wide range of automotive power systems, including electric vehicle (EV) inverters, onboard chargers, and DC/DC converters. Their low forward voltage drop and negligible reverse recovery time contribute to higher efficiency and reduced electromagnetic interference (EMI), making them a preferred choice for high-frequency and high-temperature environments. ROHM commitment to quality and innovation ensures that these SiC SBDs deliver reliable performance in the most challenging conditions.