N-Channel 1200 V 100A (Tc) 349W (Tc) Through Hole TO-247-4
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DMWSH120H23SM4

DigiKey Part Number
31-DMWSH120H23SM4-ND
Manufacturer
Diodes Incorporated
Manufacturer Product Number
DMWSH120H23SM4
Description
SICFET N-CH 1200V TO-247
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 100A (Tc) 349W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Diodes Incorporated
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
23mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs
217 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3962 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
349W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 30
Factory Stock: 360
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
123,49000 €23,49 €
3015,20933 €456,28 €
12014,99592 €1 799,51 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:23,49000 €
Unit Price with VAT:28,89270 €