Name: IMT65R075M2HXUMA1
Brand: Infineon Technologies
SKU: 448-IMT65R075M2HXUMA1-ND
Price: 6.2976 EUR
Availability: OutOfStock

New Product

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMT65R075M2HXUMA1
DigiKey Part Number	448-IMT65R075M2HXUMA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMT65R075M2HXUMA1
Description	SICFET N-CH 650V 33.7A HSOF-8
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 33.7A (Tc) 178W (Tc) Surface Mount PG-HSOF-8
Datasheet	Datasheet

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 5.6V @ 2.4mA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 14.9 nC @ 18 V
Series CoolSiC™ G2	Vgs (Max) +25V, -10V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 516 pF @ 400 V
Part Status Active	Power Dissipation (Max) 178W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology SiCFET (Silicon Carbide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-HSOF-8
Current - Continuous Drain (Id) @ 25°C 33.7A (Tc)	Package / Case 8-PowerSFN
Drive Voltage (Max Rds On, Min Rds On) 15V, 20V	Base Product Number IMT65R075
Rds On (Max) @ Id, Vgs 95mOhm @ 11.9A, 18V