NC1M120C12HTNG
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NC1M120C75HTNG

DigiKey Part Number
3372-NC1M120C75HTNG-ND
Manufacturer
NovuSem
Manufacturer Product Number
NC1M120C75HTNG
Description
SiC MOSFET N 1200V 75mohm 47A 4
Customer Reference
Detailed Description
N-Channel 1200 V 47A (Tc) 288W (Ta) Through Hole TO-247-4L
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
NovuSem
Series
NC1M
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
75mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
2.8V @ 5mA
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1450 pF @ 1000 V
Power Dissipation (Max)
288W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
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