Name: TP65H070G4LSGBEA-TR
Brand: Renesas Electronics Corporation
SKU: 1707-TP65H070G4LSGBEA-TR-ND
Price: 7.7982 EUR
Availability: InStock

New at DigiKey

N-Channel 650 V 29A (Tc) 125W (Tc) Surface Mount 8-PQFN (8x8)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TP65H070G4LSGBEA-TR
DigiKey Part Number	1707-TP65H070G4LSGBEA-TR-ND - Tape & Reel (TR) 1707-TP65H070G4LSGBEA-TRCT-ND - Cut Tape (CT) 1707-TP65H070G4LSGBEA-TRDKR-ND - Digi-Reel®
Manufacturer	Renesas Electronics Corporation
Manufacturer Product Number	TP65H070G4LSGBEA-TR
Description	650V, 70MOHM GAN FET IN 8X8 PQFN
Manufacturer Standard Lead Time	5 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 29A (Tc) 125W (Tc) Surface Mount 8-PQFN (8x8)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Renesas Electronics Corporation
Series	SuperGaN®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	85mOhm @ 18A, 12V
Vgs(th) (Max) @ Id	4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	11.9 nC @ 12 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	588 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (8x8)
Package / Case	8-VDFN Exposed Pad