N-Channel 600 V 2.5A (Ta) 30W (Tc) Through Hole TO-220SIS
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TK3A60DA(STA4,Q,M)

DigiKey Part Number
TK3A60DA(STA4QM)-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK3A60DA(STA4,Q,M)
Description
MOSFET N-CH 600V 2.5A TO220SIS
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 2.5A (Ta) 30W (Tc) Through Hole TO-220SIS
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
π-MOSVII
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.8Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK3A60
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Quantity
All prices are in EUR
Tube
QuantityUnit PriceExt Price
11,46000 €1,46 €
500,69620 €34,81 €
1000,62170 €62,17 €
5000,49082 €245,41 €
1 0000,44869 €448,69 €
2 0000,41327 €826,54 €
5 0000,37544 €1 877,20 €
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1,46000 €
Unit Price with VAT:1,79580 €