NovuSem Single FETs, MOSFETs
Mfr Part # | Quantity Available | Price | Series | Package | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
218 Marketplace | 218 : 57,76427 € Tray | Tray | Active | - | SiCFET (Silicon Carbide) | 1200 V | 214A (Tc) | 20V | 12mOhm @ 20A, 20V | 3.5V @ 40mA | +22V, -8V | 8330 pF @ 1000 V | - | - | Surface Mount | Wafer | Die | |||
218 Marketplace | 218 : 42,30404 € Tray | Tray | Active | - | SiCFET (Silicon Carbide) | - | 214A (Tc) | 20V | - | - | - | - | - | - | - | - | - | |||
0 Marketplace | Active | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.8V @ 5mA | +20V, -5V | 1450 pF @ 1000 V | 288W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |




